SPICE model of the resonant-tunnelling diode
SPICE model of the resonant-tunnelling diode
复制标题
谐振隧道二极管的 SPICE 模型
DOI：
10.1049/el:19960576
复制
发表时间：
1996
影响因子：
1.1
通讯作者：
K. Molvar
中科院分区：
文献类型：
--
作者：
E. Brown;O. B. McMahon;L. Mahoney;K. Molvar
一个SPICE 3模型的共振隧穿二极管，结合了零偏置和谷点之间的相干电流分量的物理配方与经验配方的非相干，或过剩，在偏置电压超过谷电流。该模型是专为I型RTD，如GaAs/AlGaAs结构，和一个拟合过程中开发的实验电流/电压曲线的模型参数。
A SPICE3 model is developed for the resonant-tunnelling diode that combines a physical formulation of the coherent current component between zero bias and the valley point with an empirical formulation for the incoherent, or excess, current at bias voltages beyond the valley. The model is designed for type-I RTDs, such as GaAs/AlGaAs structures, and a fitting procedure is developed to derive the parameters of the model from the experimental current/voltage curve.