Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing
Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing
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DOI：
10.7567/1882-0786/ab4934
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发表时间：
2019-11-01
影响因子：
2.3
通讯作者：
Kachi, Tetsu
中科院分区：
文献类型：
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作者：
Narita, Tetsuo;Sakurai, Hideki;Kachi, Tetsu
为了研究超高压退火过程中的镁扩散，激活了GaN中的镁受体，采用外延生长方法制备了具有p-n结的GaN样品，并在1573K、1 GPa下进行了退火处理。镁向n型底层扩散的分布不能用简单的扩散模型来解释。我们发现氢原子和镁原子一起扩散。通过考虑耗尽层中电场对带正电间隙H原子扩散的抑制作用，我们可以更好地再现Mg-H扩散分布，表明H原子在Mg扩散过程中起着关键作用。(C)2019年日本应用物理学会
To investigate Mg diffusion during ultra-high-pressure annealing, which activates Mg acceptors in GaN, GaN samples with p-n junctions prepared via epitaxial growth were annealed at 1573 K under 1 GPa. The profiles of Mg diffusion toward the underlying n-type layer cannot be explained by a simple diffusion model. We found that H atoms diffused along with Mg atoms. By considering the suppressed diffusion of positively charged interstitial H atoms due to the electric field in the depletion layer, we could better reproduce the Mg-H diffusion profiles, suggesting that H atoms play a key role in the Mg diffusion process. (C) 2019 The Japan Society of Applied Physics