Strain engineering in 2D hBN and graphene with evaporated thin film stressors
Strain engineering in 2D hBN and graphene with evaporated thin film stressors
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DOI：
10.1063/5.0153935
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发表时间：
2023-07
影响因子：
4
通讯作者：
Ahmad Azizimanesh;Aditya Dey;S. Chowdhury;Eric Wenner;W. Hou;Tara Peña;H. Askari;Stephen M. Wu
中科院分区：
文献类型：
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作者：
Ahmad Azizimanesh;Aditya Dey;S. Chowdhury;Eric Wenner;W. Hou;Tara Peña;H. Askari;Stephen M. Wu
我们展示了一种技术，应变二维六方氮化硼（hBN）和石墨烯通过沉积应力薄膜封装剥落的薄片。我们选择光学透明的应力源，以便能够通过拉曼光谱分析2D薄片中的应变。将拉曼峰位移的厚度相关分析与hBN和石墨烯的原子模拟相结合，我们可以探索这些材料中的逐层应变传递。hBN和石墨烯显示应变分别转移到多层薄片的顶部四层和两层中。hBN已被广泛用作其他2D材料的保护盖层，而石墨烯已被用作各种应用中的顶栅层。这项工作的发现表明，应变2D异质结构与蒸发的应力薄膜通过hBN帽盖层或石墨烯顶部接触是可能的，因为应变不限于一个单一的层。
We demonstrate a technique to strain two-dimensional hexagonal boron nitride (hBN) and graphene by depositing stressed thin films to encapsulate exfoliated flakes. We choose optically transparent stressors to be able to analyze strain in 2D flakes through Raman spectroscopy. Combining thickness-dependent analyses of Raman peak shifts with atomistic simulations of hBN and graphene, we can explore layer-by-layer strain transfer in these materials. hBN and graphene show strain transfer into the top four and two layers of multilayer flakes, respectively. hBN has been widely used as a protective capping layer for other 2D materials, while graphene has been used as a top gate layer in various applications. Findings of this work suggest that straining 2D heterostructures with evaporated stressed thin films through the hBN capping layer or graphene top contact is possible since strain is not limited to a single layer.