Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
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DOI：
10.1016/j.jallcom.2009.01.073
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发表时间：
2009-06
影响因子：
6.2
通讯作者：
Shu-zhen Yu;G. Miao;Yixin Jin;Tiemin Zhang;Hang Song;Hong Jiang;Zhiming Li;Dabing Li;Xiaojuan Sun
中科院分区：
文献类型：
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作者：
Shu-zhen Yu;G. Miao;Yixin Jin;Tiemin Zhang;Hang Song;Hong Jiang;Zhiming Li;Dabing Li;Xiaojuan Sun
采用金属有机化学气相沉积法在Si（100）衬底上生长了无催化剂的InP纳米线。在这种方法中，原位沉积的In液滴是InP纳米线生长的种子。为了控制外延InP纳米线的生长，对In液滴沉积时间、生长温度和V/III比等生长相关方面进行了详细的研究。实验结果表明，纳米线的直径、形状和长度可以通过生长条件来控制。
Catalyst-free InP nanowires were grown on Si (100) substrates by metal organic chemical vapor deposition. In this method, in situ deposited In droplets are seeds of the InP nanowires growth. In order to control the growth of epitaxial InP nanowires, a detailed investigation on the growth related aspects such as the In droplets deposition time, growth temperature, and V/III ratio has been made. The experimental results indicate that the diameter, shape, and length of the nanowires can be controlled by growth conditions.