Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets

Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets
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柔性透明云母片上二维 GaSe 晶体的外延和光响应

DOI:
10.1021/nn405529r
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发表时间:
2014-02-01
期刊:
影响因子:
17.1
通讯作者:
Peng, Hailin
Peng, Hailin
中科院分区:
材料科学1区
文献类型:
--
作者:
Zhou, Yubing;Nie, Yufeng;Peng, Hailin

文献摘要

被引文献

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我们提出了通过简单的范德瓦尔斯外延方法在柔性透明云母衬底上控制合成高质量二维(2D)GaSe晶体的方法。货车。单层和几层的横向尺寸高达几十微米的GaSe纳米片的生产。GaSe纳米片的取向和成核位置得到了很好的控制。20镓硒晶体为基础的光电探测器上的机械刚性SiO2/Si和灵活的云母基板上进行了演示。在透明柔性云母衬底上的2D GaSe晶体器件中观察到有效的光响应,而不管具有不同半径的重复弯曲。具有高效光响应性的20 GaSe晶体的受控生长为光电探测器的基本方面和新应用开辟了机会。
We present the controlled synthesis of high-quality two-dimensional (2D) GaSe crystals on flexible transparent mica substrates via a facile van der Waals epitaxy method. Single- and few-layer GaSe nanoplates with the lateral size of up to tens of micrometers were produced. The orientation and nucleation sites of GaSe nanoplates were well-controlled. The 20 GaSe crystal-based photodetectors were demonstrated on both mechanically rigid SiO2/Si and flexible mica substrates. Efficient photoresponse was observed in 2D GaSe crystal devices on transparent flexible mica substrates, regardless of repeated bending with different radii. The controlled growth of 20 GaSe crystals with efficient photoresponsivity opens up opportunities for both fundamental aspects and new applications in photodetectors.