Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation
Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation
复制标题
低温等离子体活化后Ge晶片表面亲水性研究
DOI：
10.1149/1.3089363
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发表时间：
2009-01-01
影响因子：
3.9
通讯作者：
Lin, Chenglu
中科院分区：
文献类型：
--
作者：
Ma, Xiaobo;Chen, Chao;Lin, Chenglu
等离子体活化因其即使在低温退火区也能诱导出较强的成键能而被研究。本文通过接触角测量，分析了氧、氮等离子体活化对Ge、Si、SiO_2表面亲水性的影响。与湿化学处理(如含氢氧化铵溶液)相比，O2或N-2等离子体活化可显著提高Ge晶片表面的亲水性。对于Ge，O-2等离子体仅活化10 S就获得了高亲水性和光滑的表面，接触角测量表明，在相同的活化条件下，O-2等离子体比N-2等离子体更显著。在去离子水中漂洗后，表面粗糙度大大降低，只有氧等离子体活化的样品才能观察到这种表面粗糙度。(C)2009年电化学会。[DOI：10.1149/1.3089363]版权所有。
Plasma activation has been investigated for its ability to induce a strong bonding energy even at low-temperature annealing. In this paper, Ge, Si, and SiO2 surface hydrophilicities with oxygen and nitrogen plasma activation are analyzed by contact angle measurement. Compared to wet chemical treatments, such as solutions containing ammonium hydroxide, the hydrophilicity of Ge wafer surface is strongly enhanced by O-2 or N-2 plasma activation. For germanium, a highly hydrophilic and smooth surface has been obtained by O-2 plasma activation only for 10 s. The contact angle measurements indicate that O-2 plasma is more remarkable than N-2 plasma in the same activation conditions. A higher surface roughness, which is only observed in the O-2 plasma activated sample, is decreased greatly after rinsing in deionized water. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3089363] All rights reserved.