Suppression of near-Fermi level electronic states at the interface in a LaNiO3/SrTiO3 superlattice.
Suppression of near-Fermi level electronic states at the interface in a LaNiO3/SrTiO3 superlattice.
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DOI：
10.1103/physrevlett.107.116402
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发表时间：
2011-09
影响因子：
8.6
通讯作者：
A. Kaiser;A. Gray;G. Conti;J. Son;A. Greer;A. Perona;A. Rattanachata;A. Saw;A. Bostwick;S. Yang;S. Yang;E. Gullikson;J. Kortright;S. Stemmer;C. Fadley
中科院分区：
文献类型：
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作者：
A. Kaiser;A. Gray;G. Conti;J. Son;A. Greer;A. Perona;A. Rattanachata;A. Saw;A. Bostwick;S. Yang;S. Yang;E. Gullikson;J. Kortright;S. Stemmer;C. Fadley
采用驻波激发光发射技术研究了SrTiO3/LaNiO3超晶格。利用核能级和价带光谱的摇摆曲线推导了层分辨光谱函数，揭示了与块体LaNiO3相比，多层中费米能级附近的电子态受到抑制。进一步分析表明，这些态的抑制在LaNiO3层上不是均匀分布的，而在界面附近更为明显。讨论了这种效应的可能起源及其与超薄LaNiO3薄膜中先前观察到的金属-绝缘体过渡的关系。
Standing-wave-excited photoemission is used to study a SrTiO3/LaNiO3 superlattice. Rocking curves of core-level and valence band spectra are used to derive layer-resolved spectral functions, revealing a suppression of electronic states near the Fermi level in the multilayer as compared to bulk LaNiO3. Further analysis shows that the suppression of these states is not homogeneously distributed over the LaNiO3 layers but is more pronounced near the interfaces. Possible origins of this effect and its relationship to a previously observed metal-insulator-transition in ultrathin LaNiO3 films are discussed.