Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN
Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN
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DOI：
10.1063/1.4867165
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发表时间：
2014-03-03
影响因子：
4
通讯作者：
Martin, Robert W.
中科院分区：
文献类型：
--
作者：
Kusch, Gunnar;Li, Haoning;Martin, Robert W.
利用阴极发光（CL）高光谱成像和二次电子成像技术，在环境扫描电子显微镜上研究了衬底错切对Al0.5Ga0.5N薄膜的影响。样品还使用原子力显微镜和高分辨率X射线衍射进行了表征。研究发现，衬底误切的微小变化对AlGaN层的形态和发光性能有很大影响。解决了两种不同的类型。对于低的错切角，观察到由随机尺寸的域组成的无裂纹形态，在它们之间，AlGaN近带边发射能量有显着的位移。对于高错切角，观察到的形态与步骤束和成分不均匀性沿着的步骤束，证明了额外的CL峰沿着的步骤束。(C)2014年作者。
The influence of substrate miscut on Al0.5Ga0.5N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed. (C) 2014 Author(s).