600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
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DOI：
10.1109/led.2013.2279846
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发表时间：
2013-11-01
影响因子：
4.9
通讯作者：
Chen, Kevin J.
中科院分区：
文献类型：
--
作者：
Tang, Zhikai;Jiang, Qimeng;Chen, Kevin J.
本文报道了600 V常关SiNx/AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMT）。通过使用氟等离子体离子注入结合采用通过等离子体增强化学气相沉积生长的17-nm SiNx薄膜作为栅极绝缘体来获得常关操作和低关状态栅极泄漏。常关断MIS-HEMT显示出+3.6V的阈值电压，在14 V的栅极偏置下430 mA/mm的驱动电流，2.1mA的比导通电阻（2），以及在V-GS = 0 V且衬底接地的情况下在1 μ A/mm的漏极漏电流下604 V的关断状态击穿电压。Omega.cm高速脉冲I-V和低速高压开关测试结果表明，AlN/SiNx钝化能有效抑制电流崩塌。
In this letter, 600-V normally-OFF SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported. Normally-OFF operation and low OFF-state gate leakage are obtained by using fluorine plasma ion implantation in conjunction with the adoption of a 17-nm SiNx thin film grown by plasma-enhanced chemical vapor deposition as the gate insulator. The normally-OFF MIS-HEMT exhibits a threshold voltage of +3.6 V, a drive current of 430 mA/mm at a gate bias of 14 V, a specific ON-resistance of 2.1 m Omega.cm(2) and an OFF-state breakdown voltage of 604 V at a drain leakage current of 1 mu A/mm with V-GS = 0 V, and the substrate grounded. Effective current collapse suppression is obtained by AlN/SiNx passivation as proved by high-speed pulsed I-V and low-speed high-voltage switching measurement results.