Acceptor state anchoring in gallium nitride
Acceptor state anchoring in gallium nitride
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DOI：
10.1063/1.5142168
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发表时间：
2020-03
影响因子：
4
通讯作者：
D. Cameron;K. O'Donnell;P. Edwards;M. Peres;K. Lorenz;M. Kappers;M. Boćkowski
中科院分区：
文献类型：
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作者：
D. Cameron;K. O'Donnell;P. Edwards;M. Peres;K. Lorenz;M. Kappers;M. Boćkowski
氮化镓中镁受体的双重性质导致动态缺陷复合物。铕旁观者离子揭示了两个光谱独特的亚稳态中心之间的切换，每个中心对应于一个特定的受体态。通过将铕和氧离子共注入GaN（Mg）中，我们还产生了锚定态系统。在这样做的过程中，我们创造了丰富的以前未识别的稳定中心，我们表示为“Eu 0（Ox）”。我们介绍了一个微观模型，这些中心与氧取代氮的桥接网站。
The dual nature of the magnesium acceptor in gallium nitride results in dynamic defect complexes. Europium spectator ions reveal switching between two spectrally unique metastable centers, each corresponding to a particular acceptor state. By ion co-implantation of europium and oxygen into GaN(Mg), we produce, in addition, an anchored state system. In doing so, we create an abundance of previously unidentified stable centers, which we denote as “Eu0(Ox).” We introduce a microscopic model for these centers with oxygen substituting for nitrogen in the bridging site.