Energies and structures of stacking faults of Ag from the tight-binding method calculation

Energies and structures of stacking faults of Ag from the tight-binding method calculation
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紧束缚法计算的Ag堆垛层错的能量和结构

DOI:
10.1088/0965-0393/10/5/301
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发表时间:
2002
影响因子:
1.8
通讯作者:
Jian
Jian
中科院分区:
材料科学3区
文献类型:
--
作者:
Jun Cai;Jian

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The generalized stacking fault (GSF) structure and corresponding energy of Ag are studied by a tight-binding potential combined with a simulated annealing method. The potential is chosen to fit band structures and total energies from a set of first-principle calculations (Mehl M J and Papaconstantopoulos D A 1996 Phys. Rev. B 54 4519). It is found that the relaxed stacking fault energy (SFE) and anti-SFE are equal to 38 mJ m−2 and 126 mJ m−2, respectively, and are in agreement with first-principle calculations and experiment. At the same time our numerical calculations also show that the calculated generalized stacking energy as a function of displacement provides support for previous theoretical studies. In addition, the relaxed structure properties of the GSF of metal Ag are presented.