Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height
Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height
复制标题
低电子势垒高度金属氮化物/硅接触的制备
DOI：
10.1149/05809.0053ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
H. Nakashima
中科院分区：
文献类型：
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作者：
K. Yamamoto;K. Asakawa;D. Wang;H. Nakashima
我们在先前的研究中已经成功地制作出具有低电子势垒高度（ΦBN）的TiN/Si接触。在这项研究中，我们制作了Ti，Zr，Hf，TiN，ZrN和HfN/Si接触使用射频溅射方法，并评估其电气特性。金属/Si接触的结果与文献报道的结果一致。另一方面，金属氮化物/Si接触的Φ BN与金属/Si接触的Φ BN相比显著降低，这在很大程度上偏离ΦBN与金属功函数的经验关系。这被认为是由于在金属氮化物和Si之间具有氮原子的中间层。制作了TiN、ZrN和HfN作为源/漏极的背栅MOSFET，显示了正常的器件工作。从器件特性来看，关态电流和寄生电阻与金属氮化物的ΦBN有关。我们相信，这些基本的数据是有用的应用金属氮化物的金属/Si接触。
We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.