GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics
GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics
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DOI：
10.3389/fphy.2019.00134
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发表时间：
2019-09
影响因子：
3.1
通讯作者：
Xiaoxin Wang;A. C. Cuervo Covian;Lisa Je;Sidan Fu;Haofeng Li;J. Piao;Jifeng Liu
中科院分区：
文献类型：
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作者：
Xiaoxin Wang;A. C. Cuervo Covian;Lisa Je;Sidan Fu;Haofeng Li;J. Piao;Jifeng Liu
近年来，Ge和Ge_（1-x）Sn_x材料和器件在集成光子学领域取得了快速的发展。然而，有源光子器件的传统异质外延会损害CMOS电子器件在Si上的面积，限制了集成规模。此外，不可能在非晶和/或柔性衬底上外延生长GeSn以实现中红外（MIR）区域中的3D光子集成。在这里，我们提出了低温结晶的直接带隙，高结晶度Ge 1-xSnx（0.08100倍，比直接带隙转变在Ge，确认间接到直接带隙转变在GeSn在~9原子。Sn组成。此外，从a-GeSn结晶的原型p-GeSn/n-Si光电二极管在λ =2050 nm和T=300 K下达到100 mA/W的响应度，接近一些商业PbS探测器的水平。该器件还表现出光伏行为和在-1V反向偏压下1 mA/cm 2的低暗电流密度，与外延Ge/Si光电二极管相当。这些结果表明，结晶的GeSnOI提供了一个有前途的解决方案，为有源器件对3D MIR光子集成和/或MIR光子学在柔性基板上。
In recent years, Ge and Ge1-xSnx materials and devices have achieved rapid progress in integrated photonics. However, conventional heteroepitaxy of active photonic devices compromises the area on Si for CMOS electronics, limiting the scale of integration. Furthermore, it is not possible to grow GeSn epitaxially on amorphous and/or flexible substrates towards 3D photonic integration in mid infrared (MIR) regime. Here we present low-temperature crystallization of direct bandgap, high crystallinity Ge1-xSnx (0.08100x longer than the direct gap transition in Ge, confirming the indirect-to-direct band gap transition in GeSn at ~9 at. Sn composition. Moreover, a prototype p-GeSn/n-Si photodiode from a-GeSn crystallization achieves 100 mA/W responsivity at =2050 nm and T=300 K, approaching the level of some commercial PbS detectors. The device also demonstrates photovoltaic behavior and a low dark current density of 1 mA/cm2 at -1V reverse bias, comparable to epitaxial Ge/Si photodiodes. These results indicate that crystallization of GeSnOI offers a promising solution for active devices towards 3D MIR photonic integration and/or MIR photonics on flexible substrates.