Direct Spectroscopic Evidence for a Photodoping Mechanism in Polythiophene and Poly(bithiophene-alt-thienothiophene) Organic Semiconductor Thin Films Involving Oxygen and Sorbed Moisture
Direct Spectroscopic Evidence for a Photodoping Mechanism in Polythiophene and Poly(bithiophene-alt-thienothiophene) Organic Semiconductor Thin Films Involving Oxygen and Sorbed Moisture
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DOI：
10.1002/adma.200901120
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发表时间：
2009-12-11
影响因子：
29.4
通讯作者：
Ho, Peter K. -H.
中科院分区：
文献类型：
--
作者：
Zhuo, Jing-Mei;Zhao, Li-Hong;Ho, Peter K. -H.
直接红外光谱证据表明，高迁移率的聚（3-烷基噻吩）和聚[2，5-双（3-烷基噻吩-2-基）噻吩并（3，2-B）噻吩]的光掺杂伴随着氢氧根反离子的形成。这揭示了溶解水的核心作用，解释了有机半导体在环境中的电特性退化的关键特征（见图），并指出了进一步提高其稳定性的可能策略。
Direct infrared spectroscopic evidence has been obtained for photodoping of high mobility regioregular poly(3-alkylthiophene) and poly[2,5-bis(3-alkyllthiophen-2-yl) thieno (3,2-b)thiophene] with the attendant formation of hydroxide counter-ions. This reveals the central role of dissolved water, explains the key features of degradation of the electrical characteristics of organic semiconductors in the ambient (see figure), and points to possible strategies to further improve their stability.