Control of nitrogen species in helicon plasmas
Control of nitrogen species in helicon plasmas
复制标题
螺旋等离子体中氮物质的控制
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
E. Scime
中科院分区：
文献类型：
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作者：
R. Boivin;E. Scime
There are several possible reactions for both growth and decomposition of GaN layers in stable plasma conditions. A greater understanding of the plasma processes involved in the creation of the different N2 species is required before many growth related problems can be resolved. A plasma source capable of selecting different active nitrogen species could be used to study the different reactions related to the growth process. In this paper, we present a spectroscopic study of a helicon plasma source. Five different nitrogen species in the plasma are monitored, namely: N II (atomic ion), N I (atomic neutral), (molecular ion) and two different excited states of the N2 molecule as a function of the filling pressure. We show that by simply changing one plasma parameter (operating pressure), the plasma undergoes a transformation from an essentially atomic nature at low pressure to a dominantly molecular nature at higher pressure. The line intensity variations as a function of electron temperature are consistent with expectations based on the published formation rates for each species.
