Magnetic Oscillations Driven by the Spin Hall Effect in 3-Terminal Magnetic Tunnel Junction Devices
Magnetic Oscillations Driven by the Spin Hall Effect in 3-Terminal Magnetic Tunnel Junction Devices
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DOI：
10.1103/physrevlett.109.186602
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发表时间：
2012-10-31
影响因子：
8.6
通讯作者：
Buhrman, R. A.
中科院分区：
文献类型：
--
作者：
Liu, Luqiao;Pai, Chi-Feng;Buhrman, R. A.
我们发现，钽微带中的直流电流可以通过自旋霍尔效应（SHE）的自旋力矩在相邻的纳米磁体中诱导稳态磁振荡。通过接触纳米磁体的磁性隧道结（MTJ）电检测振荡。可以使用MTJ偏置来控制振荡频率以调谐磁各向异性。因此，在该3端器件中，SHE扭矩和MTJ偏置提供了对振荡幅度和频率的独立控制，从而实现了用于开发可调谐自旋扭矩纳米振荡器的新方法。
We show that a direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device, the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.