Influence of Substrate Structure on Resistance Switch Using Simple Metal Nanogap Junction
Influence of Substrate Structure on Resistance Switch Using Simple Metal Nanogap Junction
复制标题
基板结构对使用简单金属纳米间隙结的电阻开关的影响
DOI：
10.1143/jjap.47.400
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发表时间：
2008
影响因子：
1.5
通讯作者：
Tetsuo Shimizu
中科院分区：
文献类型：
--
作者：
Y. Naitoh;M. Horikawa;Tetsuo Shimizu
当施加脉冲偏压时，在金纳米间隙结的电流-电压（I-V）特性中观察到非易失性电阻滞后。为了讨论衬底对这种电阻变化的影响，评估了在其下蚀刻SiO2衬底的金纳米间隙结的I-V特性。I-V特性显示出与未蚀刻的纳米间隙结相似的电阻滞后。结果表明，衬底结构对电阻滞后特性几乎没有影响。因此，得出结论，这些非易失性电阻变化仅由于金属电极部分的变化而发生。
A nonvolatile resistance hysteresis is observed in the current–voltage (I–V) characteristics of gold nanogap junctions when pulse bias voltages are applied. In order to discuss the influence of substrates on this resistance change, the I–V characteristics of a gold nanogap junction under which a SiO2 substrate was etched were evaluated. The I–V characteristics show a similar resistance hysteresis to that on a nanogap junction without etching. The results indicate that substrate structure has almost no influence on the resistance hysterisis. Therefore, it is concluded that these nonvolatile resistance changes occur as a result of changes in only metal electrode parts.