Quantum well states in spin-dependent tunnel structures
Quantum well states in spin-dependent tunnel structures
复制标题
自旋相关隧道结构中的量子阱态
DOI：
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复制
发表时间：
1999
期刊：
影响因子：
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通讯作者：
W. D. Jonge
中科院分区：
文献类型：
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作者：
J. Moodera;J. Nowak;L. Kinder;P. Tedrow;R. Veerdonk;Bart A. Smits;M. Kampen;H. Swagten;W. D. Jonge
The magnetotransport behavior of magnetic tunnel junctions with a nonmagnetic interface layer has been studied. The initial effect of the added layer is to reduce the magnetoresistance effect. Also, the bias voltage dependence of the magnetoresistance becomes increasingly more asymmetric. The dependence of the magnetoresistance both on the thickness of the interface layer as well as on the bias voltage can be interpreted as signatures of the development of quantum well states.
