Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy.
Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy.
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DOI：
10.1021/acs.nanolett.5b03889
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发表时间：
2016-05
期刊：
影响因子：
10.8
通讯作者：
C. Tessarek;S. Fladischer;C. Dieker;G. Sarau;B. Hoffmann;M. Bashouti;M. Göbelt;M. Heilmann;M. Latzel;E. Butzen;S. Figge;A. Gust;K. Höflich;T. Feichtner;M. Büchele;K. Schwarzburg;E. Spiecker;S. Christiansen
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文献类型：
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作者：
C. Tessarek;S. Fladischer;C. Dieker;G. Sarau;B. Hoffmann;M. Bashouti;M. Göbelt;M. Heilmann;M. Latzel;E. Butzen;S. Figge;A. Gust;K. Höflich;T. Feichtner;M. Büchele;K. Schwarzburg;E. Spiecker;S. Christiansen
垂直排列的六方 InN 纳米棒是通过传统的金属有机气相外延无掩模生长的，没有任何外来催化剂。纳米棒顶部的 In 液滴表明自催化气-液-固生长模式。为了优化纳米棒形貌，对重要的生长参数进行了系统的研究。由蓝宝石衬底的高温氮化引起的纳米棒N极性对于实现垂直生长是必要的。由于会形成金属铟，因此在 InN 生长过程中通常不适用氢气，而需要使用硅烷来提高深宽比并减少蓝宝石表面纳米棒旁边的寄生沉积。结果揭示了 InN 和 GaN 纳米棒生长之间的许多相似之处，表明尽管生长温度差异很大，但过程是相似的。透射电子显微镜、空间分辨能量色散X射线光谱、X射线衍射、X射线光电子能谱和拉曼光谱已用于分析结构特性。进行空间分辨阴极发光研究以验证 InN 纳米棒的光学活性。 InN纳米棒有望成为高效热载流子太阳能电池的首选材料。
Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal-organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor-liquid-solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology. The nanorod N-polarity, induced by high temperature nitridation of the sapphire substrate, is necessary to achieve vertical growth. Hydrogen, usually inapplicable during InN growth due to formation of metallic indium, and silane are needed to enhance the aspect ratio and to reduce parasitic deposition beside the nanorods on the sapphire surface. The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar. Transmission electron microscopy, spatially resolved energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been performed to analyze the structural properties. Spatially resolved cathodoluminescence investigations are carried out to verify the optical activity of the InN nanorods. The InN nanorods are expected to be the material of choice for high-efficiency hot carrier solar cells.