Magnetoresistive random access memory using magnetic tunnel junctions
Magnetoresistive random access memory using magnetic tunnel junctions
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DOI：
10.1109/jproc.2003.811804
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发表时间：
2003-05
期刊：
影响因子：
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通讯作者：
S. Tehrani;J. Slaughter;M. Deherrera;Bradley N. Engel;N. Rizzo;J. Salter;M. Durlam;R. W. Dave;J. Janesky;B. Butcher;Ken Smith;G. Grynkewich
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文献类型：
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作者：
S. Tehrani;J. Slaughter;M. Deherrera;Bradley N. Engel;N. Rizzo;J. Salter;M. Durlam;R. W. Dave;J. Janesky;B. Butcher;Ken Smith;G. Grynkewich
磁阻随机存取存储器（MRAM）技术将自旋电子器件与标准的硅基微电子器件相结合，以获得在任何其他存储器技术中找不到的属性组合。MRAM技术的关键属性是非易失性和无限的读写耐久性。磁性隧道结（MTJ）器件相对于用于MRAM单元的其它磁阻器件具有若干优点，诸如用于读取操作的大信号和可针对电路定制的电阻。由于这些属性，MTJ MRAM可以高速操作，并且预期在商业化时具有竞争性密度。本文综述了MTJ-MRAM技术的最新进展。我们描述了存储器的工作原理，包括阅读、写和磁性材料与CMOS集成的重要方面，这使得我们最近演示了1 Mbit存储器芯片。MRAM和其他存储器技术之间的重要存储器属性进行了比较。
Magnetoresistive random access memory (MRAM) technology combines a spintronic device with standard silicon-based microelectronics to obtain a combination of attributes not found in any other memory technology. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. Magnetic tunnel junction (MTJ) devices have several advantages over other magnetoresistive devices for use in MRAM cells, such as a large signal for the read operation and a resistance that can be tailored to the circuit. Due to these attributes, MTJ MRAM can operate at high speed and is expected to have competitive densities when commercialized. In this paper, we review our recent progress in the development of MTJ-MRAM technology. We describe how the memory operates, including significant aspects of reading, writing, and integration of the magnetic material with CMOS, which enabled our recent demonstration of a 1-Mbit memory chip. Important memory attributes are compared between MRAM and other memory technologies.