Formation of Sb-Doped SnO2 p-Type Ohmic Contact for Near-UV GaN -Based LEDs by a CIO Interlayer
Formation of Sb-Doped SnO2 p-Type Ohmic Contact for Near-UV GaN -Based LEDs by a CIO Interlayer
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DOI：
10.1149/1.2748636
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发表时间：
2007-09
影响因子：
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通讯作者：
H. Hong;June O. Song;H. Na;Hyunsoo Kim;Kyoung-Kok Kim;T. Seong
中科院分区：
文献类型：
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作者：
H. Hong;June O. Song;H. Na;Hyunsoo Kim;Kyoung-Kok Kim;T. Seong
为了提高脉冲激光沉积生长的Sb掺杂SnO2(ATO)p型电极的电学和光学性能，引入了CuIn2 O3(CIO)中间层.CIO(2.5 nm)/ATO(2 5 Nm)接触在6 30℃空气中退火1min后，欧姆接触比电阻为2.1×10-3Ωcm2，在4 0 0 nm处的透过率为81%。用CIO/ATO p电极制作的近UV(400 Nm)GaN基发光二极管(LED)在注入电流为20 mA时，正向偏置电压为3.91V，与传统的Ni/Au p电极相比，具有更高的输出功率。
A Cu-doped In 2 O 3 (CIO) interlayer was introduced to enhance the electrical and optical properties of Sb-doped SnO 2 (ATO) p-type electrodes grown by pulsed laser deposition. CIO (2.5 nm)/ATO (250 nm) contacts become ohmic with specific contact resistance of 2.1 × 10 -3 Ω cm 2 and give transmittance of ∼81% at 400 nm, when annealed at 630°C for 1 min in air. Near-UV (400 nm) GaN-based light-emitting diodes (LEDs) fabricated with the CIO/ATO p-electrodes give forward-bias voltage of 3.91 V at injection current of 20 mA and show much higher output power compared to LEDs with conventional Ni/Au p-electrodes.