Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
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通过等离子体辅助分子束外延在 4 英寸 SiC 上重复且均匀地生长基于 GaN 的 HEMT，适合生产
DOI：
10.1002/pssa.201026020
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
R. Quay
中科院分区：
文献类型：
--
作者：
R. Aidam;P. Waltereit;L. Kirste;M. Dammann;R. Quay
我们报告了AlGaN/GaN基高电子迁移率晶体管（HEMT）结构的等离子体辅助分子束外延（PA-MBE）朝着适合于生产的工艺的进展。在直径达4英寸的SiC衬底上开发了均匀的生长工艺，厚度和成分变化分别为Δ d/d = ± 1%和Δ x = ± 0.5%，并且具有优异的运行重复性。在用4英寸技术处理后评价装置质量。加工后的晶圆表现出非常好的均匀性和良率。整个晶圆上所有晶体管的性能相同，具有63%的高功率附加效率（PAE），6 W/mm的功率密度，约25 dB的线性增益，以及在2 GHz和50 V漏极偏置下低于10 µ A/mm的栅极漏电流。加速寿命测试显示有希望的长期稳定性。
We report on the progress of plasma assisted molecular beam epitaxy (PA‐MBE) of AlGaN/GaN based high‐electron‐mobility‐transistor (HEMT) structures towards a process suitable for production. A uniform growth process on SiC substrates with diameter up to 4 inch was developed with variations in thickness and composition of Δd/d = ±1% and Δx = ±0.5%, respectively, and an excellent run‐to‐run reproducibility. The device quality was evaluated after processing with a 4 inch technology. Processed wafers exhibit very good uniformity and yield. Identical performance of all transistors on the entire wafers with high power added efficiency (PAE) of 63%, power density of 6 W/mm, linear gain around 25 dB, and gate leakage currents below 10 µA/mm at 2 GHz and 50 V drain bias were achieved. Accelerated lifetime tests revealed promising long term stability.