Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature
Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature
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DOI：
10.1038/s41524-017-0043-x
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发表时间：
2017-02
影响因子：
9.7
通讯作者：
M. Yi;Hongbin Zhang;Bai-Xiang Xu
中科院分区：
文献类型：
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作者：
M. Yi;Hongbin Zhang;Bai-Xiang Xu
无电流驱动的180°磁化翻转为自旋电子学的革命提供了可能性。结合第一性原理计算和温度相关磁化动力学模拟，我们证明了室温下电压驱动电荷介导的180°磁化翻转。发现电场（E）诱导的界面电荷允许纳米磁体的磁各向异性（K）的巨大调制。特别是Kis显示相对于E和外延应变线性变化。磁化动力学模拟结果表明，E脉冲可以实现面内和垂直方向的180°开关。温度效应使180°切换成为概率事件。统计分析表明，通过控制E的大小和脉冲宽度，可以在室温下实现快速（约4 ns）和低错误概率的180°开关。该研究为合理设计受热涨落影响较大的小型化纳米自旋电子器件提供了理论依据。
Voltage-driven 180° magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180° magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (E)-induced interface charge is found to allow a giant modulation of the magnetic anisotropy (K) of the nanomagnet. ParticularlyKis revealed to vary linearly with respect toEand the epitaxial strain. Magnetization dynamics simulations using the so-obtainedKshow that both in-plane and perpendicular 180° switching can be achieved byEpulses. The temperature effect renders the 180° switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180° switching achievable at room temperature by controlling the magnitude ofEand the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.