Electronic shift register memory based on molecular electron-transfer reactions
Electronic shift register memory based on molecular electron-transfer reactions
复制标题
基于分子电子转移反应的电子移位寄存器存储器
DOI：
10.1021/j100354a017
复制
发表时间：
1989
期刊：
影响因子：
--
通讯作者：
D. Beratan
中科院分区：
文献类型：
--
作者：
J. Hopfield;J. Onuchic;D. Beratan
详细介绍了分子级移位寄存器存储器的设计。存储器元件基于结合在超大规模集成电路（VLSI）衬底上的电子转移分子链，并且信息通过光致电子转移反应而移位。这样一个系统的设计要求进行了讨论，并提出了几个现实的战略，综合这些系统。这种混合分子/超大规模集成电路器件的直接优点将来自于可能的信息存储密度。还存在相当大的每比特处理能量节省的前景。这种分子移位寄存器存储器元件设计解决了与在芯片上集成具有较大（微米）尺寸特征的分子尺寸组件相关联的概念问题。
The design of a shift register memory at the molecular level is described in detail. The memory elements are based on a chain of electron-transfer molecules incorporated on a very large scale integrated (VLSI) substrate, and the information is shifted by photoinduced electron-transfer reactions. The design requirements for such a system are discussed, and several realistic strategies for synthesizing these systems are presented. The immediate advantage of such a hybrid molecular/VLSI device would arise from the possible information storage density. The prospect of considerable savings of energy per bit processed also exists. This molecular shift register memory element design solves the conceptual problems associated with integrating molecular size components with larger (micron) size features on a chip.