Bright single photon sources in lateral silicon carbide light emitting diodes
Bright single photon sources in lateral silicon carbide light emitting diodes
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DOI：
10.1063/1.5032291
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发表时间：
2018-06
影响因子：
4
通讯作者：
M. Widmann;Matthias Niethammer;T. Makino;T. Rendler;S. Lasse;T. Ohshima;J. Ul Hassan;Nguyen Tien Son;Sang-Yun Lee;J. Wrachtrup
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文献类型：
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作者：
M. Widmann;Matthias Niethammer;T. Makino;T. Rendler;S. Lasse;T. Ohshima;J. Ul Hassan;Nguyen Tien Son;Sang-Yun Lee;J. Wrachtrup
单光子发射器件已被确定为量子信息和量子通信应用的重要构建块。它们允许通过光子（所谓的飞行量子比特）长距离地收集量子信息。此外，碳化硅等衬底为电子器件提供了优良的材料平台。在这项工作中，我们联合收割机这两个功能，并表明，可以驱动单光子发射器内的碳化硅p-i-n二极管。为了实现这一目标，我们专门设计了一个横向二极管。在维斯和NIR波段，我们发现了一系列新的色心发射非经典光。一种类型的发射体可以被电激发，这表明碳化硅可以作为电可控单光子源的理想平台。
Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.