Hydrogen sensitive Schottky barriers in metal‐copper phthalocyanine junctions and their photovoltaic effect
Hydrogen sensitive Schottky barriers in metal‐copper phthalocyanine junctions and their photovoltaic effect
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金属-铜酞菁结中的氢敏感肖特基势垒及其光伏效应
DOI：
10.1063/1.329509
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发表时间：
1981
期刊：
影响因子：
--
通讯作者：
H. Tsubomura
中科院分区：
文献类型：
--
作者：
N. Yamamoto;S. Tonomura;H. Tsubomura
研究了酞菁铜（CuPc）与金属Pd、Pt、Au、Cu、In、Al和Mg的结的光伏和整流特性。电流-电压特性由酞菁铜的p型性质解释，酞菁铜的p型性质产生肖特基势垒，肖特基势垒随金属功函数变化。光生伏打效应的作用光谱表明，光吸收的空间电荷层的CuPc附近的界面有效地有助于载流子的产生。可以得出结论，氢对Pd-CuPc结的电流-电压曲线的可逆影响和光伏效应是由于Pd和CuPc之间的势垒高度的变化引起的Pd的功函数的变化。
The photovoltaic and rectification properties of junctions of copper phthalocyanine (CuPc) with metals—Pd, Pt, Au, Cu, In, Al, and Mg—are investigated. Current‐voltage characteristics are explained by the p‐type nature of copper phthalocyanine that gives rise to a Schottky barrier, which changes with the metal work function. The action spectrum of the photovoltaic effect suggests that the light absorbed only in the space charge layer of CuPc near the interface effectively contributes to the carrier generation. It is concluded that the reversible influence of hydrogen on the current‐voltage curve and the photovoltaic effect found for the Pd‐CuPc junctions are due to changes in barrier height between Pd and CuPc resulting from changes in the work function of Pd.