Origin of type-C defects on the Si(100)-(2×1) surface
Origin of type-C defects on the Si(100)-(2×1) surface
复制标题
Si(100)-(2×1)表面C型缺陷的起源
DOI：
10.1103/physrevb.65.161302
复制
发表时间：
2002
影响因子：
3.7
通讯作者：
M. Niwano
中科院分区：
文献类型：
--
作者：
M. Nishizawa;T. Yasuda;S. Yamasaki;K. Miki;M. Shinohara;N. Kamakura;Y. Kimura;M. Niwano
用扫描隧道显微镜和红外吸收光谱系统地研究了Si(100)-(2×1)表面C型缺陷的产生过程。结果表明，C型缺陷是由超高真空环境中H2O的双分子解离吸附引起的外在缺陷。提出了C型缺陷的结构模型。
The generation processes of type-C defects on the Si( 100)-(2× 1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H 2 O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.