Observation of direct p-d overlap in VSe2
Observation of direct p-d overlap in VSe2
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VSe2 中直接 p-d 重叠的观察
DOI：
10.1088/0022-3719/19/20/007
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
H. P. Hughes
中科院分区：
文献类型：
--
作者：
M T Johnson;H. Starnberg;H. P. Hughes
作者用光电子能谱证明了1T-VSe_2中的p和d价带在布里渊区中心重叠形成一个小空穴。它们还表明，空穴对霍尔系数和电阻率等体输运性质有显著的贡献，并且在这种弱电荷密度波材料中，在室温下没有直接表现出电荷密度波不稳定性。
The authors have demonstrated using photo-electron spectroscopy that the p and d valence bands in 1T-VSe2 overlap at the centre of the Brillouin zone to produce a small hole pocket. They also show that the holes can contribute significantly to bulk transport properties such as the Hall coefficient and resistivity, and that in this weak charge-density wave material there is no direct manifestation at room temperature of the charge-density-wave instability.