Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure
Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure
复制标题
多晶硅薄膜晶体管中的反向同步应力引起的退化及其通过桥接晶粒结构的抑制
DOI：
10.1109/led.2020.3005046
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发表时间：
2020
影响因子：
4.9
通讯作者：
H. Kwok
中科院分区：
文献类型：
--
作者：
M. Zhang;S. Deng;W. Zhou;Y. Yan;M. Wong;H. Kwok
在这篇文章中，提出了一种反向同步应力（RSS）来模拟有源矩阵显示中开关薄膜晶体管（TFTs）的工作状态。研究了多晶硅tft在RSS下的可靠性。RSS带来了巨大的设备退化。依赖于RSS过渡边的动态热载流子（HC）效应主导着降解。结合瞬态仿真，讨论并发展了多晶硅tft在RSS作用下的降解机理。为了抑制rss诱导的HC降解，在多晶硅tft的活性层中采用了桥晶（BG）结构。通过减小源/漏侧通道中的侧向电场，显著提高了RSS下BG tft的可靠性。
In this letter, a reversely synchronized stress (RSS) is proposed to simulate the working condition of switching thin-film transistors (TFTs) in active-matrix displays. The reliability of polycrystalline silicon (poly-Si) TFTs under RSS is characterized and investigated. RSS brings huge device degradation. A dynamic hot carrier (HC) effect, dependent on transition edges of RSS, dominates the degradation. Combined with a transient simulation, the degradation mechanism under RSS in poly-Si TFTs is discussed and developed. To suppress RSS-induced HC degradation, a bridged-grain (BG) structure is employed in the active layer of poly-Si TFTs. Via BG lines’ reducing the lateral electric field in the channel at source/drain sides, the reliability of BG TFTs under RSS is significantly improved.