Dry etching of niobium using CCl2F2 and CF4: A comparison
Dry etching of niobium using CCl2F2 and CF4: A comparison
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使用 CCl2F2 和 CF4 进行铌干法蚀刻：比较
DOI：
10.1063/1.347026
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发表时间：
1990
影响因子：
3.2
通讯作者：
J. Sasserath
中科院分区：
文献类型：
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作者：
J. Sasserath
氟利昂12与氟利昂14相比，作为一种蚀刻剂用于高密度超导电路的图像化。研究了反应离子和等离子体两种状态。ccl2f2被认为是一种优秀的铌蚀刻剂，与类似的CF4工艺相比具有显著的优势。改进包括Nb：光刻胶选择性提高了6倍，而Nb:SiO2选择性提高了1400%以上。关键尺寸控制也得到了加强，通过减少光与蚀刻之间的偏差从1。0.5 μm ~ 0.14 μm。光刻胶损耗的减少和光刻胶咬边的消除是这一改进的原因。两种腐蚀剂均未观察到SiO2表面纹理。最后，给出的数据证明了电极冷却在获得蚀刻速率可重复性方面的重要性。
Freon 12 is compared to freon 14 as an etchant for patterning of high density superconductive circuits. Both reactive ion and plasma regimes are examined. CCl2 F2 is observed to be an excellent niobium etchant, offering significant advantages over similar CF4 processes. Improvements include a six‐fold increase of Nb:photoresist selectivity, while Nb:SiO2 selectivity is increased by over 1400%. Critical dimension control was also enhanced through the reduction of photo to etch bias from between 1. 09 and 0.5 μm to 0.14 μm. Diminished photoresist loss and the elimination of photoresist undercut are the reasons for this improvement. SiO2 surface texturing is not observed with either of the two etchants. Finally, data are presented that demonstrate the importance of electrode cooling in obtaining etch rate repeatability.
“1. 超导和约瑟夫森电路 QED”，“2. 混合量子系统”。
DOI：
--
发表时间：
2012
期刊：
影响因子：
--
作者：
Hiroaki Matsumiya;Hiroto Inoue;Masataka Hiraide;Kouichi Semba
通讯作者：
Kouichi Semba