Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy
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分子束外延生长磷掺杂n型BaSi2外延薄膜的制备及表征

DOI：
10.1002/pssc.201300326
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发表时间：
2013
期刊：
Physica Status Solidi (c)
影响因子：
--
通讯作者：
T. Suemasu
T. Suemasu
中科院分区：
--
文献类型：
--
作者：
R. Takabe;M. Baba;K. Nakamura;W. Du;M. A. Khan;Shintaro Koike;K. Toko;K. Hara;N. Usami;T. Suemasu

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采用分子束外延技术生长了掺磷BaSi 2薄膜。P掺杂的BaSi 2在室温下表现出n型导电性，电子浓度增加到4×1017 cm-3。电子浓度的温度依赖性表明，激活能约为80毫电子伏。（© 2013 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Phosphorus (P)-doped BaSi2 films were grown by molecular beam epitaxy. P-doped BaSi2 showed n -type conductivity and the electron concentration increased up to 4×1017 cm–3 at room temperature. The temperature dependence of electron concentration revealed that the activation energy was approximately 80 meV. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)