Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
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DOI：
10.1103/physrevb.100.054423
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发表时间：
2019-08-19
影响因子：
3.7
通讯作者：
Sahashi, Masashi
中科院分区：
文献类型：
--
作者：
Al-Mahdawi, Muftah;Belmoubarik, Mohamed;Sahashi, Masashi
磁各向异性的电控在非易失性存储和信息处理方面有着重要的应用。通过第一性原理计算，我们发现铁磁/铁电CoPT/ZnO界面的磁各向异性受到很大程度的非挥发控制。利用氧化锌的开关极化，CoPT表面的态密度和磁各向异性发生了很大的变化。由于强的Co/铂轨道杂化和大的自旋-轨道耦合，发现了磁各向异性的很大控制。通过隧道电阻测量，实验测量了CoPT/Mg掺杂的ZnO/Co结的有效各向异性的变化。此外，我们还通过对隧道各向异性磁阻的观测，证实了磁各向异性控制的起源。
The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in the ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mgdoped ZnO/Co junctions. Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance.