Titanium silicide islands on atomically clean Si"100…: Identifying single electron tunneling effects
Titanium silicide islands on atomically clean Si"100…: Identifying single electron tunneling effects
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DOI：
10.1063/1.3437049
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发表时间：
2010-06
影响因子：
3.2
通讯作者：
J. Tedesco;J. Rowe;R. Nemanich
中科院分区：
文献类型：
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作者：
J. Tedesco;J. Rowe;R. Nemanich
在原子级洁净的Si（100）衬底上真空沉积钛薄膜（<2nm），然后退火到800 °C，形成硅化钛岛。扫描隧道显微镜（STM）和扫描隧道光谱已在这些岛上记录的电流-电压（I-V）曲线。由于每个岛与STM针尖和衬底形成双势垒隧道结（DBTJ）结构，因此根据SET的正统模型，它们将被期望表现出单电子隧穿（SET）。一些形成的岛足够小（直径<10 nm）以在室温下表现出SET，并且在从这些小岛记录的一些I-V曲线中已经识别出SET的证据。这些曲线的正统模型的框架内进行了分析，并被发现是一致的，该模型，除了在当前步骤的I-V曲线的形状略有差异。然而，大多数预计将展示SET的岛屿并没有这样做，一个...
Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (<2 nm) on atomically clean Si(100) substrates followed by annealing to ∼800 °C. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy have been performed on these islands to record current-voltage (I-V) curves. Because each island forms a double barrier tunnel junction (DBTJ) structure with the STM tip and the substrate, they would be expected to exhibit single electron tunneling (SET) according to the orthodox model of SET. Some of the islands formed are small enough (diameter <10 nm) to exhibit SET at room temperature and evidence of SET has been identified in some of the I-V curves recorded from these small islands. Those curves are analyzed within the framework of the orthodox model and are found to be consistent with that model, except for slight discrepancies of the shape of the I-V curves at current steps. However, most islands that were expected to exhibit SET did not do so, a...