Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste
Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste
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DOI：
10.7567/1347-4065/ab00e5
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发表时间：
2019-04-01
影响因子：
1.5
通讯作者：
Usami, Noritaka
中科院分区：
文献类型：
--
作者：
Fukami, Shogo;Nakagawa, Yoshihiko;Usami, Noritaka
报道了一种基于印刷和烧结的简单的SiGe在Si（100）衬底上的液相外延（LPE）。采用丝网印刷在Si（100）衬底上的Al-Ge混合浆料进行LPE，然后在空气或Ar气氛中在Al-Ge共晶温度以上退火。在空气中以800 ℃退火的情况下，在混合膏和Si衬底的表面之间形成SiGe。但是，在SiGe/Si界面处发现了一层波状的氧化膜，阻碍了SiGe的生长。另一方面，在Ar气氛中在800 ℃下退火，导致成功地形成更连续，更厚的SiGe膜，通过抑制Al的氧化。可以得出结论，使用印刷和烧制的Al-Ge混合浆料的LPE生长是一种合适的方法，以低成本和简单的高速工艺来生长SiGe。(C)2019日本应用物理学会
We report on a simple liquid-phase epitaxy (LPE) of SiGe on Si (100) substrate based on printing and firing. LPE was performed using an Al-Ge mixed paste screen-printed on a Si (100) substrate followed by annealing above the Al-Ge eutectic temperature in air or in an Ar atmosphere. In the case of annealing in air at 800 degrees C, SiGe was formed between the mixed paste and the surface of the Si substrate. However, a wave-like oxide film was confirmed at the SiGe/Si interface, which hindered the growth of SiGe. On the other hand, annealing in the Ar atmosphere at 800 degrees C led to the successful formation of a more continuous, thicker SiGe film by suppressing the oxidation of Al. It can be concluded that LPE growth using printing and firing of Al-Ge mixed paste is a suitable method to grow SiGe with a low-cost and simple high-speed process. (C) 2019 The Japan Society of Applied Physics