Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy
Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy
复制标题
使用硬 X 射线光电子能谱了解 Ti/Al2O3/Si 金属氧化物半导体叠层中掩埋界面电荷的作用
DOI：
10.1063/1.4919448
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发表时间：
2015
影响因子：
4
通讯作者：
R. Opila
中科院分区：
文献类型：
--
作者：
J. Church;C. Weiland;R. Opila
采用硬x射线光电子能谱（HAXPES）对由Si、厚、薄Al2O3和Ti金属帽组成的金属氧化物半导体（MOS）样品进行了分析。以Si 1s和c1s核心能级为能量参考，分析了Al 1s和Si 1s光谱，揭示了MOS层中电荷的位置和作用。在不同的氧化层厚度（2 nm和23 nm）下，利用HAXPES的深度灵敏度探测MOS结构中的不同区域。Ti沉积后的结果表明，薄膜和厚膜之间的能带对准值出乎意料，这可以用Al2O3层内的移动电荷行为来解释。
Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxide-semiconductor (MOS) samples consisting of Si, thick and thin Al2O3, and a Ti metal cap. Using Si 1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal information about the location and roles of charges throughout the MOS layers. With different oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment values between the thin and thick films, which are explained by the behavior of mobile charge within the Al2O3 layer.