Enhanced energy storage properties of dysprosium doped strontium titanate ceramics
Enhanced energy storage properties of dysprosium doped strontium titanate ceramics
复制标题
掺镝钛酸锶陶瓷的增强储能性能
DOI：
10.1016/j.ceramint.2013.07.126
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发表时间：
2014
影响因子：
5.2
通讯作者：
Zhi-Xiang Xie
中科院分区：
文献类型：
--
作者：
Qi-Guo Hu;Zong-Yang Shen;Yue-Ming Li;Zhu-Mei Wang;Wen-Qin Luo;Zhi-Xiang Xie
采用固相反应法制备了镝掺杂的钛酸锶陶瓷DyxSr 1 - 1.5xTiO3（Dy-STO），其中x =0、0.01、0.02、0.03和0.04。研究了镝掺杂量对Dy-STO陶瓷结构和介电性能的影响。所有陶瓷均为纯立方钙钛矿结构，晶格常数随镝掺杂量的增加而减小。扫描电子显微镜（SEM）结果表明，纯钛酸锶陶瓷的晶粒尺寸约为30 μm，掺杂镝后晶粒尺寸减小到10 μm以下。当x =0.02时，Dy-STO陶瓷的介电常数（εr=3200，1 kHz）大大提高，是纯钛酸锶陶瓷（εr=300，1 kHz）的10倍以上。在0~ 1.92kV/mm的外加偏压下，ε r具有非常稳定的特性。Dy-STO陶瓷具有介电损耗低（tanδ<0.03，1 kHz）和击穿强度高（Eb>14 kV/mm）的优点，是一种很有前途的高储能密度高压电容器材料。
Dysprosium doped strontium titanate ceramics of formula DyxSr1−1.5xTiO3(Dy-STO), wherex=0, 0.01, 0.02, 0.03, and 0.04, were prepared by solid state reaction route. The effect of dysprosium doping amount on structure and dielectric properties of Dy-STO ceramics was investigated. All ceramics are pure cubic perovskite structure, and the lattice parameter decreases with dysprosium doping amount. Scanning electronic microscope (SEM) results show that the grain size is ~30 μm for pure strontium titanate ceramic, while lowered to less than 10 μm after doping dysprosium. Strongly enhanced dielectric constant (εr=3200 at 1 kHz) is obtained for Dy-STO ceramics withx=0.02, i.e. over 10 times that of pure strontium titanate ceramic (εr=300 at 1 kHz). Furthermore, theεrshows very stable characteristic under 0~1.92 kV/mm applied bias electric fields. In virtue of low dielectric loss (tanδ<0.03 at 1 kHz) and high breakdown strength (Eb>14 kV/mm), the Dy-STO ceramics are very promising for high voltage capacitors with enhanced energy storage density.
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影响因子：
4
作者：
C. Ang;Z. Yu
通讯作者：
C. Ang;Z. Yu
钛酸钡陶瓷中的玻璃添加剂及其对与储能性能相关的电击穿强度的影响
影响因子：
5.7
作者：
Wang, Xiangrong;Zhang, Yong;Song, Xiaozhen;Yuan, Zongbao;Ma, Tao;Zhang, Qian;Deng, Changsheng;Liang, Tongxiang
通讯作者：
Liang, Tongxiang
DOI：
10.1023/a:1008924703491
发表时间：
2000-08
期刊：
Journal of Materials Science: Materials in Electronics
影响因子：
--
作者：
B. W. Ricketts;G. Triani;A. D. Hilton
通讯作者：
B. W. Ricketts;G. Triani;A. D. Hilton
影响因子：
3.9
作者：
A. L. Young;G. Hilmas;S. Zhang;R. W. Schwartz
通讯作者：
A. L. Young;G. Hilmas;S. Zhang;R. W. Schwartz
影响因子：
3.9
作者：
Dennis P. Shay;N. Podraza;N. J. Donnelly;C. Randall
通讯作者：
Dennis P. Shay;N. Podraza;N. J. Donnelly;C. Randall