Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5 as the Buffer Layer
Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5 as the Buffer Layer
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以Ta2O5为缓冲层的Pt/SrBi2Ta2O9/Ta2O5/Si的电学特性
DOI：
10.1143/jjap.40.2940
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发表时间：
2001
影响因子：
1.5
通讯作者：
I. Choi
中科院分区：
文献类型：
--
作者：
H. Choi;Yong;Seong;I. Choi
我们提出Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si结构用于非破坏性读出存储器。采用射频磁控溅射法在p型Si（100）衬底上沉积Ta 2 O 5薄膜，采用金属有机物沉积法（MOD）沉积SrBi 2 Ta 2 O 9薄膜。通过在铁电薄膜和硅衬底之间插入Ta 2 O 5缓冲层，决定性地影响存储窗口的矫顽场变得更大，因此存储窗口也随着对SrBi 2 Ta 2 O 9的电场而增加。Pt/SrBi 2 Ta 2 O 9（195 nm）/Ta 2 O 5（36 nm）/Si结构的C-V特性表明，在3-7 V的电压下，存储窗口为0.5-2.7 V，漏电流密度为1.7×10-8 A/cm 2，即使在10 V的高压下也是如此。
We propose the Pt/SrBi2Ta2O9/Ta2O5/Si structure for the application of nondestructive read-out memory. The Ta2O5 films were deposited on p-type Si (100) substrates by rf-magnetron sputtering and the SrBi2Ta2O9 films were deposited by metal organic deposition (MOD) method. Coercive field that decisively affects on the memory window becomes greater by inserting the Ta2O5 buffer layer between ferroelectric thin film and silicon substrate and thus the memory window also increases with an electric field to the SrBi2Ta2O9. The C–V characteristics of the Pt/SrBi2Ta2O9 (195 nm)/Ta2O5 (36 nm)/Si structure show memory window of 0.5–2.7 V at the applied voltage of 3–7 V. The leakage current density is 1.7×10-8 A/cm2, even at the high voltage of 10 V.