Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.
Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.
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DOI：
10.1039/c7nr08515j
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发表时间：
2018-02
期刊：
影响因子：
6.7
通讯作者：
Pengfei Zhang;Dong Li;Mingyuan Chen;Qijun Zong;Jun Shen;Dongyun Wan-;Jingtao Zhu;Zengxing Zhang
中科院分区：
文献类型：
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作者：
Pengfei Zhang;Dong Li;Mingyuan Chen;Qijun Zong;Jun Shen;Dongyun Wan-;Jingtao Zhu;Zengxing Zhang
为了满足不断增长的要求，最小化电路，开发新的设备架构，使用超薄二维材料的鼓励。在这里，我们展示了一个非挥发性的黑磷（BP）PNP结的BP/h-BN/石墨烯异质结构，其中BP作为传输通道层，六方氮化硼（h-BN）作为隧道势垒层和石墨烯是电荷捕获层。该器件架构被设计为使得仅BP的中间部分在石墨烯薄片上对齐，从而使得能够灵活地调节石墨烯电荷捕获层上的BP中的电荷载流子。因此，该器件能够在两种不同的工作模式（PNP和PP+P）下工作。每种工作模式都可以很好地保持，并表现出非易失性行为，并且每种工作模式都可以通过使用控制门进行编程。
To meet the increasing requirements of minimizing circuits, the development of novel device architectures that use ultra-thin two-dimensional materials is encouraged. Here, we demonstrate a non-volatile black phosphorus (BP) PNP junction in a BP/h-BN/graphene heterostructure in which BP acts as a transport channel layer, hexagonal boron nitride (h-BN) serves as a tunnel barrier layer and graphene is the charge-trapping layer. The device architecture is designed such that only the middle part of the BP is aligned over the graphene flake, enabling the flexible tuning of the charge carriers in the BP over the graphene charge-trapping layer. Thus, the device exhibits the ability to work in two different operating modes (PNP and PP+P). Each operating mode can be retained well and demonstrates non-volatile behavior, and each can be programmed by using the control-gate.