Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si : Mechanism and Reduction
Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si : Mechanism and Reduction
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硅等离子蚀刻过程中纳米级表面粗糙度的建模和模拟:机理和还原
DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
Kouichi Ono
中科院分区:
文献类型:
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作者:
Hirotaka Tsuda;Yoshinori Takao;Koji Eriguchi;Kouichi Ono