Light extraction enhancement from GaN‐based thin‐film LEDs grown on silicon after substrate removal using HNA solution
Light extraction enhancement from GaN‐based thin‐film LEDs grown on silicon after substrate removal using HNA solution
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DOI：
10.1002/pssc.200983527
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发表时间：
2010-07
期刊：
影响因子：
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通讯作者：
Xinbo Zou;Hu Liang;K. Lau
中科院分区：
文献类型：
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作者：
Xinbo Zou;Hu Liang;K. Lau
去除吸收性Si衬底是获得高光输出功率的有效方法之一。在本文中，我们报告了如何GaN基薄膜LED生长在硅（111）衬底上的MOCVD成功地转移到铜衬底上的室温电镀和如何原来的Si衬底被去除的HNA溶液。在制造之后，III族氮化物LED薄膜没有显示出裂纹或退化。与未去硅的传统LED相比，去硅后LED的光输出功率提高了约30%。（© 2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
One of the promising methods to obtain high optical output power from LEDs grown on Si is to eliminate the absorptive Si substrate. In this paper, we report how GaN-based thin-film LEDs grown on silicon (111) substrates by MOCVD were successfully transferred to a copper substrate by room-temperature electroplating and how the original Si substrate was removed by HNA solution. After fabrication, the III-nitride LED thin films showed no cracks or degradation. And the light output power of LEDs after Si removal increased by ∼ 30% compared with conventional ones before the Si removal. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)