Nonlinear semiconductor lasers and amplifiers for all-optical information processing.
Nonlinear semiconductor lasers and amplifiers for all-optical information processing.
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DOI：
10.1063/1.3491096
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发表时间：
2010-07
期刊：
影响因子：
2.9
通讯作者：
M. Adams;A. Hurtado;D. Labukhin;I. Henning
中科院分区：
文献类型：
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作者：
M. Adams;A. Hurtado;D. Labukhin;I. Henning
综述了半导体激光器和激光放大器在光注入作用下的非线性特性，并在多截面激光器、垂直腔半导体光放大器和表面发射激光器等方面提出了新的研究成果。概述了主要的基础材料参数，并讨论了边缘发射和垂直腔体器件的关键设计方法。讨论了理论建模方法的概述，并总结了关键的实验结果。光注入边缘发射和垂直腔半导体激光器和激光放大器的实际应用，包括应用的例子，其中包括光逻辑和混沌通信。
The nonlinear properties of semiconductor lasers and laser amplifiers when subject to optical injection are reviewed and new results are presented for multisection lasers, vertical cavity semiconductor optical amplifiers, and surface-emitting lasers. The main underlying material parameters are outlined and the key design approaches are discussed for both edge-emitting and vertical cavity devices. An overview of theoretical modeling approaches is discussed and a summary of key experimental results is presented. The practical use of optically injected edge-emitting and vertical cavity semiconductor lasers and laser amplifiers is illustrated with examples of applications including, among others, optical logic and chaotic communication.