Aluminum doping induced columnar growth of homoepitaxial ZnO films by metalorganic chemical vapor deposition
Aluminum doping induced columnar growth of homoepitaxial ZnO films by metalorganic chemical vapor deposition
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铝掺杂诱导金属有机化学气相沉积同质外延 ZnO 薄膜柱状生长
DOI：
10.1063/1.4824116
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发表时间：
2013-09-30
影响因子：
4
通讯作者：
Huang, F.
中科院分区：
文献类型：
--
作者：
Ding, K.;Hu, Q. C.;Huang, F.
研究了金属有机化学气相沉积过程中铝掺杂对c平面ZnO（0001）单晶基底上ZnO薄膜生长的影响。结果表明，铝的掺杂诱导了三维柱状生长模式。x射线光发射光谱表明，部分铝被分离到生长前沿。结合实验接触角测量和理论第一性原理计算表明，铝掺杂提高了薄膜的表面能。此外，铝的掺杂也会降低原子的扩散迁移率。结果表明，铝在同外延生长过程中起到了抗表面活性剂的作用，增加了获得高质量n型ZnO薄膜的难度。(C) 2013 AIP出版有限责任公司
The effect of aluminum doping on the growth of ZnO films on c-plane ZnO (0001) single crystal substrates during metalorganic chemical vapor deposition was investigated. It was found that aluminum doping induces a growth mode of three-dimensional columnar growth. X-ray photoemission spectroscopy demonstrates that partial aluminum is segregated to the growth front. A combined experimental contact angle measurements and theoretical first-principle calculations suggest that the surface energy of the films is promoted by aluminum doping. Besides, aluminum doping also tends to decrease the adatoms diffusion mobility. We conclude that aluminum acts as an antisurfactant element during the homoepitaxial growth, and it increases the difficulty in obtaining high quality n-type ZnO films. (C) 2013 AIP Publishing LLC.