Nitride Semiconductor Surfaces. Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method.
Nitride Semiconductor Surfaces. Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method.
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氮化物半导体表面。
DOI：
10.1380/jsssj.21.162
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
I. Akasaki
中科院分区：
文献类型：
--
作者：
M. Tabuchi;Y. Takeda;T. Takeuchi;H. Amano;I. Akasaki
