Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films -: art. no. 121309
Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films -: art. no. 121309
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DOI：
10.1103/physrevb.72.121309
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发表时间：
2005-09-01
影响因子：
3.7
通讯作者：
Kawasaki, M
中科院分区：
文献类型：
--
作者：
Andrearczyk, T;Jaroszynski, J;Kawasaki, M
自旋-轨道和s-d交换相互作用的影响进行了探讨的磁阻（MR）测量，以50 mK的ZnO和Zn 1-xMnxO（x=3和7%，电子浓度类似于10（20）cm（-3）。根据弱局域化理论对ZnO：Al的数据进行描述，得到纤锌矿结构的kp哈密顿量的耦合常数λ（so）=（4.4 +/- 0.4）× 10（-11）eV cm，H-so= λ（so）c（sxk）。一个复杂的和大的MR的Zn 1-xMnxO：Al的解释在s-d自旋分裂的影响的无序修改的电子-电子相互作用，这解释了积极的MR。一个大的负MR被暂时分配到磁极化子形成的前体效应。建议提出的模型解释的起源MR最近观察到在许多磁性氧化物系统。
Effects of spin-orbit and s-d exchange interactions are probed by magnetoresistance (MR) measurements carried out down to 50 mK on ZnO and Zn1-xMnxO with x=3 and 7% and electron concentration similar to 10(20) cm(-3). A description of the data for ZnO:Al in terms of weak-localization theory leads to the coupling constant lambda(so)=(4.4 +/- 0.4)x10(-11) eV cm of the kp hamiltonian for the wurzite structure, H-so=lambda(so)c(sxk). A complex and large MR of Zn1-xMnxO:Al is interpreted in terms of the influence of the s-d spin-splitting on the disorder-modified electron-electron interactions, which explains positive MR. A large negative MR is tentatively assigned to a precursor effect of the magnetic polaron formation. It is suggested that the proposed model explains the origin of MR observed recently in many magnetic oxide systems.