SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS
SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS
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DOI：
10.1063/1.112903
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发表时间：
1994-09-26
影响因子：
4
通讯作者：
NIEMI, HEM
中科院分区：
文献类型：
--
作者：
AHOPELTO, J;LIPSANEN, H;NIEMI, HEM
采用金属有机物气相外延法在纳米级InP岛上选择性生长InGaAs量子阱。该结构在1.35 eV处显示出强烈的低温光致发光。通过增加激发强度的发射峰的蓝移表明载流子是三维受限的。量子阱插入到岛中允许更好地控制通过自组织生长制造的结构的性质，自组织生长是一种实现纳米级结构而不使用任何光刻工艺步骤的新技术。
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.