Na0.5Bi0.5)0.87Pb0.13TiO3 thin films on different substrates for ferroelectric memory applications
Na0.5Bi0.5)0.87Pb0.13TiO3 thin films on different substrates for ferroelectric memory applications
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DOI：
10.1063/1.2811957
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发表时间：
2007-11
影响因子：
4
通讯作者：
Changhong Yang;G. Hu;Xun-Yun Sun
中科院分区：
文献类型：
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作者：
Changhong Yang;G. Hu;Xun-Yun Sun
采用金属有机分解法在Pt∕Ti∕SiO2∕Si和Bi2Ti2O7∕Si衬底上制备了（Na0.5Bi0.5）0.87Pb0.13TiO3薄膜。对金属-铁电-金属或金属-铁电-绝缘体-半导体电容器进行了电学测量。由于Bi2Ti2O7是一种有效的扩散势垒，因此（Na0.5Bi0.5）0.87Pb0.13TiO3∕Bi2Ti2O7∕Si的漏电流和记忆性能相对提高。（Na0.5Bi0.5）0.87Pb0.13TiO3在Pt上的极化电场和电容电压测量显示出良好的铁电性能。通过电容随温度的变化可以识别（Na0.5Bi0.5）0.87Pb0.13TiO3中的三个相变。
(Na0.5Bi0.5)0.87Pb0.13TiO3 thin films have been prepared on Pt∕Ti∕SiO2∕Si and Bi2Ti2O7∕Si substrates using a metal organic decomposition method. The electrical measurements were conducted on metal-ferroelectric-metal or metal-ferroelectric-insulator-semiconductor capacitors. As Bi2Ti2O7 is an effective diffusion barrier, the leakage current and memory properties of (Na0.5Bi0.5)0.87Pb0.13TiO3∕Bi2Ti2O7∕Si are relatively improved. The polarization-electric field and capacitance-voltage measurements of (Na0.5Bi0.5)0.87Pb0.13TiO3 on Pt show good ferroelectric properties. The three phase transitions in (Na0.5Bi0.5)0.87Pb0.13TiO3 can be recognized by the change of capacitance with temperature.