Electrical characterization of GaN/SiC n-p heterojunction diodes
Electrical characterization of GaN/SiC n-p heterojunction diodes
复制标题
GaN/SiC n-p 异质结二极管的电气特性
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
T. Moustakas
中科院分区：
文献类型：
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作者：
J. Torvik;M. Leksono;J. Pankove;B. Zeghbroeck;H. Ng;T. Moustakas
制备了GaN/SiC异质结二极管并对其进行了表征。采用金属有机化学气相沉积（MOCVD）和电子回旋共振辅助分子束外延（ECR-MBE）技术在p型硅面6H-SiC硅片上生长n型氮化镓外延薄膜。I-V特性的二极管理想因数和饱和电流分别低至1.2和10−32 A/cm2。MOCVD-和ecr - mbe生长的n-p异质结的内置电位分别在2.90±0.08 eV和2.82±0.08 eV下通过电容电压测量得到。根据内置电位，确定了GaN/SiC异质结构在ΔEC=0.11±0.10 eV和ΔEV=0.48±0.10 eV的能带偏移量。
GaN/SiC heterojunction diodes have been fabricated and characterized. Epitaxial n-type GaN films were grown using metalorganic chemical vapor deposition (MOCVD) and electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) on p-type Si-face 6H-SiC wafers. The I–V characteristics have diode ideality factors and saturation currents as low as 1.2 and 10−32 A/cm2, respectively. The built-in potential in the MOCVD- and ECR-MBE-grown n-p heterojunctions was determined from capacitance–voltage measurements at 2.90±0.08 eV and 2.82±0.08 eV, respectively. From the built-in potential the energy band offsets for GaN/SiC heterostructures are determined at ΔEC=0.11±0.10 eV and ΔEV=0.48±0.10 eV.