Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer
复制标题
单 (111) 硅片中单片集成三轴高冲击加速度计的设计、制造和测试
DOI：
10.3390/mi10040227
复制
发表时间：
2019-04-01
期刊：
影响因子：
3.4
通讯作者：
Li, Xinxin
中科院分区：
文献类型：
--
作者：
Cai, Shengran;Li, Wei;Li, Xinxin
在本文中，单片三轴压阻式高冲击加速度计已被提出，已被单面制作在一个单一的（111）硅晶片。设计并加工了一个单悬臂梁结构和两个双悬臂梁结构，分别用于检测Z轴和X/Y轴高冲击加速度。与X/Y轴结构不同于Z轴结构的先前三轴传感器不同，本文中用于三轴感测的类似悬臂感测结构促进了针对不同感测轴的三个元件之间的均匀性能的设计，并且简化了多轴感测结构的微制造。由于三轴传感器采用单晶片单面制造工艺，因此传感器具有足够的机械强度，可以承受恶劣的高g冲击环境，并且可以在标准半导体代工厂进行兼容性批量制造。在单面工艺形成传感器后，未接触的芯片背面有助于简单可靠的芯片焊接封装。在高冲击测试中，传感器在沿着X-/Y轴和Z轴方向上均具有线性传感输出，灵敏度（在直流5V电源下）分别为0.80-0.88 μV/g和1.36 μV/g。由于三轴加速度计的单片紧凑集成的优势，所提出的单片三轴传感器有希望被嵌入到高冲击测量应用的检测微系统中。
In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80–0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.