Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple‐quantum well diodes
Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple‐quantum well diodes
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DOI：
10.1002/pssc.200674736
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
T. Inada;A. Satake;K. Fujiwara
中科院分区：
文献类型：
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作者：
T. Inada;A. Satake;K. Fujiwara
研究了高亮度绿色InGaN多量子阱发光二极管（LED）的电致发光（EL）光谱强度，并与单量子阱LED进行了比较。结果表明，随着有源威尔斯阱数的增加，载流子捕获增强，EL随温度和电流的变化模式得到显著改善。指出垂直载流子俘获过程对解释低温下电致发光强度异常变化的重要性。（© 2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The electroluminescence (EL) spectral intensity has been investigated in the high-brightness green InGaN multiple-quantum-well light emitting diode (LED) in comparison with the single-quantum-well LED over a wide temperature range and as a function of injection current. It is found that the EL variation pattern with temperature and current is dramatically improved when the number of active wells increases as a result of enhanced carrier capture. The importance of vertical carrier capture processes is pointed out to explain the anomalous EL intensity variations at low temperatures. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)