Thermoelectric properties of Se-deficient and Pb-/Sn-codoped In4Pb0.01Sn0.03Se3−x polycrystalline compounds
Thermoelectric properties of Se-deficient and Pb-/Sn-codoped In4Pb0.01Sn0.03Se3−x polycrystalline compounds
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DOI：
10.1016/j.jallcom.2014.06.196
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发表时间：
2014-12
影响因子：
6.2
通讯作者：
Jin Hee Kim;Min Jae Kim;Suekyung Oh;J. Rhyee
中科院分区：
文献类型：
--
作者：
Jin Hee Kim;Min Jae Kim;Suekyung Oh;J. Rhyee
研究了In 4 Pb 0. 01Sn 0.03 Se 3− x（x= 0.1、0.2、0.3、0.4和0.5）。X-射线衍射测量显示x ≥ 0.4的晶格参数逐渐变化，没有任何杂质相，表明硒缺乏的系统变化。Pb/Sn共掺杂化合物中Se的缺乏具有增加载流子浓度（x ≤ 0.4）的效应，导致室温附近的电阻率比In4Pb0.01Sn0.03Se3的电阻率降低，功率因数增加。由于在宽的温度范围内的高功率因数和相对低的热导率（0.6 W m-1 K-1），对于x= 0.1的Se不足化合物，在723 K下的高热电优值系数ZT高达1.2，这作为n型多晶材料是非常高的值。
We investigated thermoelectric properties of Se-deficient and Pb-/Sn-codoped polycrystalline compounds of In 4 Pb0. 01Sn 0.03 Se 3− x (x= 0.1, 0.2, 0.3, 0.4, and 0.5). The X-ray diffraction measurement shows gradual change of lattice parameters for x⩽ 0.4 without any impurity phases indicating systemic change of Se-deficiency. The Se-deficiency in Pb-/Sn-codoped compounds has an effect of increasing carrier concentration (x⩽ 0.4) resulting in the decrease of electrical resistivity and increase of power factor near room temperature than the one of In 4 Pb 0.01 Sn 0.03 Se 3. Because the high power factor over a wide temperature range and relatively low thermal conductivity (0.6 W m− 1 K− 1), the high thermoelectric figure-of-merit ZT is reached up to 1.2 at 723 K for x= 0.1 Se-deficient compound which is very high value as n-type polycrystalline materials.